The VBA6317 is a high-performance dual N-channel power MOSFET from VBsemi, featuring advanced Trench technology. Housed in a compact MSOP8 package, it offers low on-resistance (25 mΩ at VGS=4.5V; 20 mΩ at VGS=10V), logic-level drive capability, and a continuous drain current of 6.5 A per channel, while delivering a 30 V drain-source breakdown voltage. Its excellent conduction characteristics and low switching losses make it ideal for high power density and high-efficiency power conversion and load management systems.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| MSOP8 | Dual N+N | 30V | ±20V | 1.6V | 6.5A | 25(mΩ) | 20(mΩ) | Trench |
Product Parameters:
Configuration: Dual N
Drain-Source Voltage VDS(V): 30
Gate-Source Voltage VGS(±V): 20
Threshold Voltage Vth(V): 1.6
On-Resistance RDS(on) @ VGS=4.5V: 25 mΩ
On-Resistance RDS(on) @ VGS=10V: 20 mΩ
Continuous Drain Current ID(A): 6.5 (per channel)
Technology: Trench
Package: MSOP8
Power Conversion: Low-power DC-DC converters and point-of-load synchronous rectification, where low RDS(on) reduces conduction losses.
Battery Protection: Protection boards for single/multi-cell lithium batteries, using back-to-back dual N-channel MOSFETs for charge and discharge control.
Load Switching: Dual-channel high-side or low-side power distribution in portable devices, IoT modules, and wearables.
Motor Drive: H-bridge or half-bridge drivers for small drones, robot joints, and precision micro DC motors.
Signal & Interface Protection: USB Type-C VBUS switches, overvoltage protection, and power multiplexing.
Leveraging Trench technology and the compact MSOP8 package, the VBA6317 is ideally suited for portable, battery-powered, and consumer electronic applications that demand both low on-resistance and minimal footprint.
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